We performed He I ultraviolet photoelectron spectroscopy (UPS) of jet-cooled aromatic molecules using a newly developed photoelectron imaging (PEI) spectrometer. The PEI spectrometer can measure photoelectron spectra and photoelectron angular distributions at a considerably higher efficiency than a conventional spectrometer that uses a hemispherical energy analyzer. One technical problem with PEI is its relatively high susceptibility to background electrons generated by scattered He I radiation. To reduce this problem, we designed a new electrostatic lens that intercepts background photoelectrons emitted from the repeller plate toward the imaging detector. An energy resolution (ΔE/E) of 0.735% at E = 5.461 eV is demonstrated with He I radiation. The energy resolution is limited by the size of the ionization region. Trajectory calculations indicate that the system is capable of achieving an energy resolution of 0.04% with a laser if the imaging resolution is not limited. Experimental results are presented for jet-cooled benzene and pyridine, and they are compared with results in the literature.
Following photodissociation of 2-chloropropene (H(2)CCClCH(3)) at 193 nm, vibration-rotationally resolved emission spectra of HCl (upsilon < or = 6) in the spectral region of 1900-2900 cm(-1) were recorded with a step-scan time-resolved Fourier-transform spectrometer. All vibrational levels show a small low-J component corresponding to approximately 400 K and a major high-J component corresponding to 7100-18,700 K with average rotational energy of 39+/-(3)(11) kJ mol(-1). The vibrational population of HCl is inverted at upsilon = 2, and the average vibrational energy is 86+/-5 kJ mol(-1). Two possible channels of molecular elimination producing HCl + propyne or HCl + allene cannot be distinguished positively based on the observed internal energy distribution of HCl. The observed rotational distributions fit qualitatively with the distributions of both channels obtained with quasiclassical trajectories (QCTs), but the QCT calculations predict negligible populations for states at small J. The observed vibrational distribution agrees satisfactorily with the total QCT distribution obtained as a weighted sum of contributions from both four-center elimination channels. Internal energy distributions of HCl from 2-chloropropene and vinyl chloride are compared.
Secondary-ion mass spectrometry (SIMS) sputter depth profiling is used for the quantitative depth profile analysis of impurities. However, SIMS suffers from a large quantitative uncertainty and depth-scale uncertainty at the interfaces of heteromultilayers and in the near-surface region, because the secondary ion yield and sputtering yield are significantly influenced by matrix effects and accumulation effects of the primary ion. In this paper, the authors report on the development of a new depth profiling method with good depth-scale accuracy and low matrix effects to overcome these problems. This was achieved through the combination of high-spatial-resolution bevel depth profiling and sputtered neutral mass spectrometry with laser postionization (laser-SNMS). The sample used to evaluate this new bevel depth profiling method was a silicon on insulator wafer obtained using the separation by implantation of oxygen technique and implanted with boron. Depth profiles were obtained using both SIMS and laser-SNMS and evaluated by comparison with the stopping and range of ions in matter (SRIM) simulation. Although both methods afforded quite good depth resolutions, in SIMS the secondary ion signal intensity for boron was amplified by the influence of the matrix effect and showed a discontinuous profile shape at the interfaces, whereas the profile for boron obtained using laser-SNMS was consistent with the SRIM results and exhibited high continuity. By using a combination of the bevel depth profiling method and laser-SNMS method, it was confirmed that an easy-to-analyze depth profile could be obtained for the dopant concentration in multilayer samples, which is difficult to obtain using the conventional SIMS method.
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