Cadmium Zinc Telluride (CdZnTe) is a ternary Ⅱ- Ⅵundeviating band gap semiconductor with cubic Zinc blende formation and it is a propitious material for ambient temperature xray as well as gamma ray sensor detectors. Cadmium Zinc Telluride (CdZnTe) thin layer coating were developed on nickel substrate by chemical bath deposition in non-aqueous approach. The as grown films were inspected by X-ray diffraction (XRD), Field emission scanning electron microscope (FESEM), Scanning electron microscope, Fourier transform infrared spectroscopy (FTIR), PL spectra, UV spectra, Raman spectroscopy and FourProbe analysis. Studies tell that as grown films are poly-crystalline in nature along with cubic zinc blende formation. The structural properties like crystallite size, lattice constant, micro strain as well as dislocation density were evaluated. FESEM and SEM analysis reveals that the as developed films are smooth and equal sized uniform spherical grains distributed in single state as well as in cluster form. The average size of grain film is observed to be 12.33 nm. Optical study reveals the broad transmittance escorted by the band gap energy of 2.2eV. Electrical study reveals that resistivity of as grown film is 5.1×105 Ω-cm at room temperature.
Cadmium telluride (CdTe) is a binary II-VI direct band gap semiconducting material. Cadmium telluride is a promising electrochemical and photovoltaic material for thin film solar cells. It shows both p and n type conductivity. A nanocrystalline thin film of CdTe was deposited on nickel plate by chemical bath deposition method containing 0.01M Cadmium acetate and 0.02M tellurium dioxide. The structural, compositional, and optical analysis were studied by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscope (SEM), fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL).The diffraction peak observed at 2=23.59° with (111) plane indicate the crystalline phase of CdTe film. The average crystalline size is measured to be 7nm.Compositional analysis reveals the presence of both Cd and Te elements. The EDS spectroscopy shows the ratio of Cd and Te is1:2 in case of as deposited film. The photoluminescence peak is observed at 471nm.
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