The influences of the applied bias voltage and the pre-irradiation treatment by alpha particles on the electrical properties of sandwich structural diamond film detectors under 5.5 MeV 241Am alpha-particle irradiation were investigated. Results of current- voltage(I-V) and pulse height distribution measurements showed that the dark current of the diamond film detector would increase due to the pre-irradiation by alpha particles. Under the alpha irradiation, the detector under negative bias voltage had a higher response current and a better signal-to-noise ratio than that under a positive bias. Raman scattering studies directly demonstrated that the above phenomenon resulted mainly from the different structural imperfection distributions along the thickness direction. An energy resolution of about 25.0% was obtained for the detector under a negative bias voltage and 38.4% under a positive bias voltage. With increasing alpha-particle irradiation time, both the response current and the charge collection efficiency increased obviously.
Due to its smoothest surface, fewer defects, and better crystal quality, [100] textured diamond film is well suited for the application of optoelectronic and microelectronic devices. Carrier concentration and mobility are very important parameters of semiconductor materials. In order to further broadening the application of diamond films in optoelectronics and microelectronics, it is necessary to made a research on Hall effect characteristics of [100] textured and [111] textured films. In this paper, different textured polycrystalline diamond films are deposited on silicon substrates by hot filament chemical vapor deposition (HFCVD) method under different conditions. Microstructures of diamond films are characterized by X-ray diffraction (XRD). High quality [100] textured and [111] textured diamond films are obtained. Dark current-voltage (I-V) characteristics of different-oriented films after annealing are investigated at room temperature. The carrier concentration and mobility of diamond films are measured by Hall effect test system as the temperature changing from 100 to 500 K. Results indicate that the textures of diamond films affect the value of carrier mobility:carrier concentration increases and mobility decreases with the decrease of temperature; and the deposited films are of p-type materials. The carrier concentration and mobility of polycrystalline [100]-textured diamond films at room temperature are 4.3×104 cm-3 and 76.5 cm2/V·s, respectively.
Diamond films deposited by hot filament chemical vapor deposition (HFCVD) under different deposition conditions are characterized using spectroscopic ellipsometric measurements in infrared region of 2.5—12.5 μm. Effects of deposition conditions on infrared spectroscopic ellipsometry of diamond films are investigated. The optical properties of diamond films depend strongls on its quality. The refractive index increases and the extinction coefficient decreases monotonicly with increasing sp3 C content. High quality optical diamond films are obtained under reactor pressure of 4.0 kPa when substrate temperature and carbon concentration are 750℃ and 0.9%, respectively. Refractive index and extinction coefficient of diamond film of high transparency are 2.385 and of the order of 10-4, respectively.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.