In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO 2 Novel technique to enhance etch selectivity of carbon antireflective coating over photoresist based on O 2 / CHF 3 / Ar gas chemistryIn process optical emission spectroscopy (OES) measurements, excitation mechanisms as dictated by the process plasma can be complex to analyze optical signals quantitatively. Applications of a new electron beam excitation method demonstrate distinct merits for plasma process diagnostics and process control. The electron energy control attribute of the method provides the means to optimize and monitor specific species optical emission in process chemistries to achieve process control such as endpoint. The authors present gas phase results from photoresist ash and SiO 2 etch using O 2 and CF 4 /Ar discharges, respectively. The effluent density variations as measured with the e-beam method during process stages demonstrate process endpoint detection. Simultaneous measurements with FTIR spectroscopy and direct plasma OES is also presented for comparison.
Traditionally process plasmas are often studied and monitored by optical emission spectroscopy. Here, the authors compare experimental measurements from a secondary electron beam excitation and direct process plasma excitation to discuss and illustrate its distinctiveness in the study of process plasmas. They present results that show excitations of etch process effluents in a SF 6 discharge and endpoint detection capabilities in dark plasma process conditions. In SF 6 discharges, a band around 300 nm, not visible in process emission, is observed and it can serve as a good indicator of etch product emission during polysilicon etches. Based on prior work reported in literature the authors believe this band is due to SiF 4 gas phase species. V
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