he &apid Cammunicatins section is intended for the accele'rated publication of important new resulgs. pince manuscripgs gi e'en priority treatment both in ghe edltargal ance and fn prgductg0n aughgrs shguld explain gn their submittal letter why the work justijies this special handling. A Rapid Communication shguid be no longer than 3' printed &age praafs are sent to authors, The energy gap for quasiparticle excitations in the p/3 states of the fractional quantum Hall effect (FICHE) has been determined in an ultrahigh-mobility (gg 5&106 cm2/Vsec), quasi-twodimensional electron system in GaAs-(A1, Ga)As, for which the finite thickness of the carrier system is accurately known. Recent fear-particle numerical calculations incorporating such a 6nite thickness and mixing vrith higher Landau levels account for the high-magnetic-6eld data to within
p as T 0 and persist up to temperatures of -10 K. In spite of the strength of the p"" features, no indication of plateau development is visible in the Hall resistance pzy These structures at half-filling appear to have their origin in a novel many-particle state distinctly different from the fractional quantum Hall effect.
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