Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions, were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode and the single-electron transistor. The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism, based on growth from a liquid metal seed particle. In this letter we suggest the existence of a growth regime quite different from VLS. We show that this new growth regime is based on a solid-phase diffusion mechanism of a single component through a gold seed particle, as shown by in situ heating experiments of GaAs nanowires in a transmission electron microscope, and supported by highly resolved chemical analysis and finite element calculations of the mass transport and composition profiles.

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Flexibility and modulus of elasticity data for two types of wet cellulose fibres using a direct force-displacement method by means of AFM are reported for never dried wet fibres immersed in water. The flexibilities for the bleached softwood kraft pulp (BSW) fibres are in the range of 4-38 9 10 12 N -1 m -2 while the flexibilities for the thermomechanical pulp (TMP) fibres are about one order of magnitude lower. For BSW the modulus of elasticity ranges from 1 to 12 MPa and for TMP between 15-190 MPa. These data are lower than most other available pulp fibre data and comparable to a soft rubber band. Reasons for the difference can be that our measurements with a direct method were performed using never dried fibres immersed in water while other groups have employed indirect methods using pulp with different treatments.