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Nanometer fabrication using selective thermal desorption of SiO 2 induced by focused electron beams and electron beam interference fringesWe have discovered and developed a process where positive relief structures in silica sol-gel films can be made using electron beam writing methods. Electron beam cured sol-gel structures have been made that have lateral and vertical dimensions both on the micron and nanometer scales. The sol-gel structures can be used as etch masks or deposition masks on substrates or can be used directly as positive relief molds for embossing the micro-or nanoscale features into other materials.

ChemInform Abstract Compound (I) crystallizes in the space group C2/m with Z=2; (II) in C2/c with Z=4. These structures show that the large complexed cations form closest packed arrays, leaving anionic sites that are isolated from each other, except for rather constricted channels that interconnect them. Each anionic site is surrounded by eight complexed cations and by six other anionic sites. The compound (II) is isostructural with the analogous electride. This provides important information about the nature of the electron-trapping site and indeed Na-can be substituted for e-in one, two, or three sites around the complexed Cs cation as shown by 133Cs MAS NMR studies.

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The crystal structure of Cs+(18‐crown‐6)2 · e‐ is determined at ‐ 57°C (space group C2/ c with Z=4).