In this paper, we present a new effect influencing the operation of organic field‐effect transistors resulting from the choice of gate insulator material. In a series of studies it was found that the interaction between the insulator and the semiconductor materials plays an important role in carrier transport. The insulator is not only capable of affecting the morphology of the semiconductor layer, but can also change the density of states by local polarization effects. Carrier localization is enhanced by insulators with large permittivities, due to the random dipole field present at the interface. We have investigated this effect on a number of disordered organic semiconductor materials, and show here that significant benefits are achievable by the use of low‐k dielectrics as opposed to the existing trend of increasing the permittivity for low operational voltage. We also discuss fundamental differences in the case of field‐effect transistors with band‐like semiconductors.

Oxidation of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD, 1 a) and N,N'-diphenyl-N,N'-bis(2,4-dimethylphenyl)-(1,1'-biphenyl)-4,4'-diamine (1 b) with SbCl(5) affords the corresponding radical cations quantitatively. The crystal and molecular structure of 1 b and [1 b]SbCl(6), the first tetraphenyl benzidene derivatives to be characterised crystallographically in both the neutral and radical cation states, reveal molecular parameters in agreement with the predictions made on the basis of DFT studies. Analysis of the NIR transition in the radical cations [1](+) (.) allows an estimate of the electronic coupling parameter V (1 a(+) (.) 3200 cm(-1); 1 b(+) (.) 3300 cm(-1)), the reorganisation energy lambda(1 a(+) (.) 7500 cm(-1); 1 b(+) (.) 7800 cm(-1)), and the linear coupling constant l (1 a(+) (.) 3100 cm(-1); 1 b(+) (.) 2700 cm(-1)) of the symmetric mode.

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The rapidly expanding field of organic semiconductors for display and low-cost electronic applications requires materials, which not only have high mobility but also benefit from solution processability and environmental stability. In this paper we present a new class of solution coatable organic materials with excellent stability to air and light. Spin-coated FET devices operate at ambient conditions without encapsulation and show p-type field-effect mobilities of 2 x 10-3 cm2V-1s-1 and on/off ratios greater than 104. Thin films can be deposited from common organic solvents onto a variety of substrates. These films are mechanically robust and can withstand temperatures in excess of 100 °C without significant changes in electrical performance. FET switching and transient characteristics at higher frequencies are also discussed. These types of materials should find applications in many areas of flexible electronics.