The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 10(6)-10(7) A cm(-2). It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.

The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/ MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed. V

Co2FeAl0.5Si0.5 films with a surface roughness of 0.12 nm have been grown epitaxially on lattice-matched MgAl2O4 (001) substrates by off-axis sputtering. X-ray diffraction shows pronounced Laue oscillations, rocking curves as narrow as 0.0043°, and clear Co2FeAl0.5Si0.5 (111) peaks indicating L21 ordering. Magnetic characterizations show a clear magnetocrystalline anisotropy comprising cubic and epitaxy-induced uniaxial terms. Nuclear magnetic resonance measurements reveal L21 order of 81% in the Co2FeAl0.5Si0.5 films. Magnetotransport measurements show a distinct separation of anisotropic magnetoresistance and ordinary magnetoresistance. These results demonstrate the state-of-the-art crystalline quality and magnetic uniformity of the Co2FeAl0.5Si0.5 films.