A fundamental understanding and advancement of nanopatterning and nanometrology are essential in the future development of nanotechnology, atomic scale manipulation, and quantum technology industries. Scanning probe-based patterning/imaging techniques have been attractive for many research groups to conduct their research in nanoscale device fabrication and nanotechnology mainly due to its cost-effective process; however, the current tip materials in these techniques suffer from poor durability, limited resolution, and relatively high fabrication costs. Here, we report on employing GaN nanowires as a robust semiconductor material in scanning probe lithography (SPL) and microscopy (SPM) with a relatively low-cost fabrication process and the capability to provide sub-10 nm lithography and atomic scale (<1 nm) patterning resolution in field-emission scanning probe lithography (FE-SPL) and scanning tunneling microscopy (STM), respectively. We demonstrate that GaN NWs are great candidates for advanced SPL and imaging that can provide atomic resolution imaging and sub-10 nm nanopatterning on different materials in both vacuum and ambient operations.
Nanoelectronics manufacturing requires an ongoing development of lithography and also encompasses some “unconventional” methods. In this context, the authors use field emission scanning probe lithography (FE-SPL) to generate nanoscaled electronic devices. For the generation of future novel quantum devices, such as single-electron transistors or plasmonic resonators, patterning of features in the sub-10 nm regime as well as a defined metallization is necessary. In terms of metallization, the authors take advantage of the well-known lift-off process for creating narrow gap junctions. Narrow gap electrodes have found wide approval in the formation of narrow gap junctions and can be employed for the investigation of the electrical properties of molecules. In the lift-off process presented here, two sacrificial layers (50 nm polymethylglutarimide and 10 nm calixarene) have been deposited and patterned by FE-SPL. Subsequently, the sample was treated with tetraethyl-ammonium hydroxide in order to ensure an undercut. Afterward, a layer of 10 nm thick Cr has been deposited on top and finally the sacrificial films have been removed, leaving behind only the chromium film deposited directly on the substrate. In this work, the authors will present the utilization of novel active cantilevers with diamond coated silicon tips for FE-SPL purposes in order to generate chromium metal features by lift-off for the generation of future quantum devices. In this context, they will present the integration of an ultrananocrystalline diamond (UNCD) layer deposited on the tip of an active silicon cantilever. Electron emission and FE-SPL capabilities of UNCD coated silicon tips are evaluated. The authors demonstrate a reliable fabrication scheme of sub-15 nm coplanar narrow gap metal electrodes.
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