Record thick (up to 100 μm) epitaxial layers of a prospective metastable semiconductor Ga2O3 were grown by HVPE (Halide Vapor Phase Epitaxy) on GaN buffer layers on c-sapphire substrates. The X-ray diffraction pattern of the layers show that the structure of the layer is a pure kappa(ε)-Ga2O3 without any other phases. At the same time, the organization of a domain structure was observed, which manifests itself in the form of pseudohexagonal prisms that retain the orientation of the gallium nitride sublayer. Schottky diodes with nickel contacts were fabricated and the electrical and photoelectric properties of the layers were studied. Capacitance-voltage (C-V) and frequency-capacitance (C-f) dependencies were studied, photocurrent and photocapacitance spectra were measured. Keywords: Gallium oxide, HVPE, epitaxial layers, sapphire substrates.
The results of a study by transmission electron microscopy of the structural state of α-Ga2O3 film with a thickness of about 1 micron, grown on the prismatic m-face sapphire by the method of chloride vapor phase epitaxy, are presented. The influence of the substrate orientation on the formation of the dislocation structure is discussed. Threading dislocations, including those with the Burgers vector 1/3< 1120 >, and dislocation half-loops are revealed. The inclined propagation of dislocations and the formation of dislocation half-loops result in the reduction of the threading dislocation density near the surface.. Keywords: dislocations, gallium oxide, TEM.
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