Nowadays, the search for novel active materials for laser devices is proceeding faster and faster thanks to the development of innovative materials able to combine excellent stimulated emission properties with low-cost synthesis and processing techniques. In this context, amplified spontaneous emission (ASE) properties are typically investigated to characterize the potentiality of a novel material for lasers, and a low ASE threshold is used as the key parameter to select the best candidate. However, several different methods are currently used to define the ASE threshold, hindering meaningful comparisons among various materials. In this work, we quantitatively investigate the ASE threshold dependence on the method used to determine it in thin films of dye-polymer blends and lead halide perovskites. We observe a systematic ASE threshold dependence on the method for all the different tested materials, and demonstrate that the best method choice depends on the kind of information one wants to extract. In particular, the methods that provide the lowest ASE threshold values are able to detect the excitation regime of early-stage ASE, whereas methods that are mostly spread in the literature return higher thresholds, detecting the excitation regime in which ASE becomes the dominant process in the sample emission. Finally, we propose a standard procedure to properly characterize the ASE threshold, in order to allow comparisons between different materials.

Amplified Spontaneous Emission (ASE) threshold represents a crucial parameter often used to establish if a material is a good candidate for applications to lasers. Even if the ASE properties of conjugated polymers have been widely investigated, the specific literature is characterized by several methods to determine the ASE threshold, making comparison among the obtained values impossible. We quantitatively compare 9 different methods employed in literature to determine the ASE threshold, in order to find out the best candidate to determine the most accurate estimate of it. The experiment has been performed on thin films of an homopolymer, a copolymer and a host:guest polymer blend, namely poly(9,9-dioctylfluorene) (PFO), poly(9,9-dioctylfluorene-cobenzothiadiazole) (F8BT) and F8BT:poly(3- hexylthiophene) (F8BT:rrP3HT), applying the Variable Pump Intensity (VPI) and the Variable Stripe Length (VSL) methods. We demonstrate that, among all the spectral features affected by the presence of ASE, the most sensitive is the spectral linewidth and that the best way to estimate the ASE threshold is to determine the excitation density at the beginning of the line narrowing. We also show that the methods most frequently used in literature always overestimate the threshold up to more than one order of magnitude.

Lead halide perovskites are currently widely investigated as active materials in photonic and optoelectronic devices. While the lack of long term stability actually limits their application to commercial devices, several experiments demonstrated that beyond the irreversible variation of the material properties due to degradation, several possibilities exist to reversibly modulate the perovskite characteristics by acting on the environmental conditions. These results clear the way to possible applications of lead halide perovskites to resistive and optical sensors. In this review we will describe the current state of the art of the comprehension of the environmental effects on the optical and electronic properties of lead halide perovskites, and of the exploitation of these results for the development of perovskite-based sensors.

Due to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among others, often require high quality over large areas which is readily attainable by vacuum deposition. Here, we report the amplified spontaneous emission (ASE) properties of two CsPbBr3 films obtained by single-step RF-magnetron sputtering from a target containing precursors with variable compositions. Both the samples show ASE over a broad range of temperatures from 10 K up to 270 K. The ASE threshold results strongly temperature dependent, with the best performance occurring at about 50 K (down to 100 µJ/cm2), whereas at higher temperatures, there is evidence of thermally induced optical quenching. The observed temperature dependence is consistent with exciton detrapping up to about 50 K. At higher temperatures, progressive free exciton dissociation favors higher carrier mobility and increases trapping at defect states with consequent emission reduction and increased thresholds. The reported results open the way for effective large-area, high quality, organic solution-free deposited perovskite thin films for optoelectronic applications, with a remarkable capability to finely tune their physical properties.

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