An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors and its onchip measurements are reported. The multi-cell distributed amplifier uses four gain cells where each consists of a common collector input stage followed by a cascode gain stage. The chip includes bias, decoupling and terminating circuits for the dc and RF interconnects; it measures 0.72 mm by 0.4 mm. It consumes 210 mW of power and can deliver up to 5.5 dBm of output power at 195 GHz. The amplifier achieves an average gain of 13.5 dB with an overall bandwidth over 200 GHz and a ± 2 dB gain ripple. The measurements indicate that this is the widest band dc-coupled amplifier reported to date and has the highest bandwidth reported among non-cascaded distributed amplifiers.
In this work we present two transimpedance amplifier (TIA) circuits designed for fibre optical interconnect systems. We compare a common base (CB) topology with a common emitter (CE) shunt-shunt feedback topology in terms of frequency response, power consumption, noise and input impedance. The two TIAs are designed on a 130nm InP DHBT technology from Teledyne Scientific Company (TSC) with an ft/fmax of 520 GHz/1.15 THz and are measured in the frequency and time domains. They exhibit a TI-gain of 42 dBΩ with a 133 GHz bandwidth, the highest bandwidth reported in literature and a power consumption of 32.3 mW for the CB and 25.5 mW for the CE. Eye diagram measurements were conducted up to 64 Gbps and input referred noise density was measured at 30.2 pA/√𝐻𝑧 for the CB and 13.9 pA/√𝐻𝑧 for the CE.
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e. the cascaded SSDA (C-SSDA) and the matrix SSDA (M-SSDA)), for ultra-wideband amplification. Two new monolithic microwave integrated circuit (MMIC) amplifiers are presented: an SSDA MMIC with 7.1 dB average gain and 200 GHz bandwidth; and the world's first M-SSDA, which has a 12 dB average gain and 170 GHz bandwidth. Both amplifiers are based on an Indium Phosphide DHBT process with 250 nm emitter width. To the authors best knowledge, the SSDA has the widest bandwidth for any single stage amplifier reported to date. Furthermore, the three tier M-SSDA has the highest bandwidth and gain-bandwidth product for any matrix amplifier reported to date.
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