The use of Radio Frequency Identification (RFID) technology is ubiquitous in a number of businesses and sectors, including retail sales, smart cities, agriculture, and transportation. Additionally, educational institutions have started using RFID to track student attendance, combining this technology with Google Sheets and the Internet of Things (IoT) to build a realtime attendance tracking system. For a thorough examination of the creation of a student attendance system, this paper includes a systematic literature evaluation of 21 major research published on IoT based attendance systems employing RFID. This RFID-based attendance system enables automation, eliminating several problems connected with the manual process, such as time wasting, proxies, and the possibility of losing the attendance sheet, in contrast to the traditional attendance system, which depends on manual signatures. By creating a system that automatically registers students' attendance by merely flashing their student cards at the RFID reader, all the aforementioned difficulties may be successfully addressed. This automated method guarantees attendance monitoring accuracy and dependability while also saving time. This paper's conclusion highlights the significant advantages of implementing an IoT-based attendance system based on RFID technology. The suggested solution provides a trustworthy, efficient, and secure alternative to manual attendance techniques, successfully addressing their shortcomings. This paper offers helpful insights for institutions looking to create a cutting-edge attendance system that increases student involvement and academic achievement by looking at guiding principles, best practices, and the successful resolution of difficulties.
Current Polysilicon gate etch processes for sub-0.25~1 CMOS products require a dielectric hardmask layer for improved dimensional control. These processes typically use a deintegrated, two-step reactive ion etch (RIE) process to, first, define the dielectric hardmask image and then, second, etch the poly-silicon gate material. Following the ARC etcWmask open RIE step within a dedicated dielectric film etch tool, wafers are processed through an Oxygen Ash and wet cleaned before receiving the Hardmask Polysilicon RIE within a dedicated Polysilicon etch tool. We have evaluated an integrated Polysilicon etch process for sub-0.25~1 logic products by combining the mask open and poly etches into a one-pass RIE process using a lowpressure TCP Poly etch tool. With this process we also investigated a CD line-width reduction etch (Trim) in which the Polysilicon line-width was significantly reduced to increase device speed. One advantage to be expected from this Trim etch would be an improved line-width control. The low-pressure environment ensures less lateral attack of the resist from the etch species during the mask open and allows better control of gate line-width, across-wafer and across-chip.This integrated Gate etch has several advantages over a de-integrated sequence. An integrated Gate etch leads to simplification of the manufacturing process by eliminating one dry etch step and one wet clean step with the potential to increase overall fab capacity. Similarly, product defect density levels should be reduced by having less overall process steps and, more importantly, less RIE process steps required to define the gate dimension. These RIE process step(s) can be major candidates for defect generation.The product film stack consisted of a thin thermal gate oxide with a 2000A Polysilicon gate layer. A thin organic, Anti-Reflective Coating (ARC) was used beneath the Deep UV photo resist layer. The initial process step uses an He:02/HBr or He:02/C12 chemistry to remove both the organic ARC layer and to slightly narrow the resist line-width prior to gate definition. A FREON chemistry was used for the hard-mask dielectric etch. The Poly etch process used a C12/HBr/02 chemistry for the bulk etch followed by an 02/HBr selective etch chemistry to remove Poly residue while minimizing gate oxide erosion.component of poly line-width variation. The effect of this line-width variation was studied versus HBr/02 flow ratios in the initial process step. In addition, a relationship between etched Poly line-width versus He:02/HBr etch time was established to ensure control of final line-width dimensions. Pattern factor and its effect on resist definition and final line-width were also investigated. In this talk we will be discussing our latest results using this optimized integrated RIE process for deep-UV and mid-UV (I-line) products and some of the manufacturing issues related to implementing such a process.A LAM 9400-TCP Poly etch system was used for the evaluation of the integrated process.A significant goal of this investigation was...
The oil industry, in its constant strive to maximize gains out of operational data is constantly exploring new horizons where to combine the latest advances in data science and digitalization, into the areas where key decisions to drive economical and operational decisions reside with an aim at optimizing the capital expenditure through sound decision making. High volume operational data has been recognized as hiding many opportunities where the captured details these repositories that include real time logs and bit run summaries, provide a clear opportunity where to extract insights to support optimized decisions in terms of equipment selection to achieve the desired operational objectives. Current possibilities within data science have opened the possibilities through viable solutions, which in this case, aims at providing advise on which equipment in terms of BHA and Bits to select, that would yield the desired outcome for a drilling run. The whole exercise being based on evidence gathered from previous runs where the details for the equipment, the relevant well characteristics, and the observed rates of penetration and the used parameters, are taken into consideration to provide the optimum combination to be implemented in new runs. The present study describes the methodology in terms of data utilization, data science method development and solution deployment, with the associated issues that had to be addressed in order to provide a viable solution in terms of data utilization, technical validity and final user utilization, as well as a series of recommendations to be addressed within any such endeavors to assure the value addition.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.