We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysilox- ane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF- TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabri- cated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and I(on)/I(off) ratio were approximately 0.35 cm2 V(-1) s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.
We report on solution-processed n-channel ZnO thin-film transistors. We fabricated by a low-temperature process to improve their performance using inkjet printing under various conditions. The resulting films were inkjet-printed with a resolution 200 dpi using droplets of 50 µm diameter and 35 pl volume. The characteristics of the inkjet-printed TFTs were improved significantly at an annealing temperature of 150 °C. The field-effect mobility, Vth, and on/off current ratio were 3.03 cm2 V−1 s−1, −3.3 V, and 106, respectively. These results indicate that annealing at 150 °C is sufficient to obtain a mobility (μsat) as large as 3.03 cm2 V−1 s−1.
Potentiometric oxygen sensors with excellent sensitivity in a low oxygen concentration range are designed based on intrinsic logarithmic response characteristics, and an asymmetric electrode structure, differentiated from conventional oxygen sensors with reference oxygen gases or parts exposed to air, is implemented. Electrolytes and electrode materials that formulate oxygen sensor devices are evaluated by comprehensively considering their reactivity to trace oxygen, oxygen ion formation, and ease of movement. The sensor using an yttria-stabilized zirconia bulk ceramic electrolyte measures the oxygen concentration in an oxygen-hydrogen mixture down to 0.5%, with a response time of 7.8 s. The sensor with a Nafion proton conductor film and a polyimide gas separation membrane allows room-temperature sensing and measures the oxygen concentration to a minimum of 2%.
-We fabricated stretchable thin-film transistors(TFTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and parylene gate insulator. The TFTs exhibited a field-effect mobility of 5 cm 2 V 1 s 1 and a current on/off ratio of 10 5 at a relatively low operating voltage. Furthermore, the fabricated transistors showed no noticeable changes in their electrical performance for large strains of up to 50 %.
-Research on the edge isolation process of typical polycrystalline silicon solar cells was carried out using laser scribing equipment. The voltage-current characteristics of the solar cell before and after laser scribing were analyzed using a solar simulator. Current density and efficiency increased as the fill factor of the solar cell remained constant after the laser scribing process. The efficiency of the solar cell can be increased in a short time by the edge isolation process performed via a laser scribing process. The polycrystalline silicon solar cell was made into a series electrode, and the efficiency of the solar cell increased because the width of the solar cell was narrowed and the active region was widened by the laser scribing process.
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