In an effort to develop new electrical insulation materials, four different kinds of organically modified layered silicate were incorporated into an epoxy matrix to prepare nanocomposites for electrical insulation. Five wt% of organically modified layered silicates were processed in a planetary centrifugal mixer in an epoxy matrix, and the thermal, mechanical, and electrical properties of the cured epoxy/layered silicate were investigated. The morphology of the nanoscale silicate dispersed in the epoxy matrix was observed using transmission electron microscopy, and the interlayer distance was measured by wide-angle X-ray scattering diffraction analysis.
We analyzed defective bonding pad in various ways and determined the causes of defects that boosts oxidation of aluminium by fluoride residue on surface of pad with moisture. Additionally, we compared and evaluated methods to minimize pad defects in aspects such as etching and wafer storage environment. In case of wafers after pad open etching process using common CF 4 stored in FOUP, the concentration of fluoride ions in FOUP was 230 ng L -1 and it decreased down to 170 ng L -1 when Ar sputtering step was added after using CF 4 . Also under the same condition, fluoride ion concentration in FOUP decreased down to 20 ng L -1 when nitrogen purge was introduced for 10 minutes to the FOUP where wafers were stored and the moisture also decreased from 40% before purge to 10% after purge. As a result of observation on pad surface after storing wafers in FOUP for 120 hours under each condition, negligible amount of defects were found when nitrogen was purged. Therefore, we conclude that defects on pad were generated by existing fluoride ions after etching process and moisture in the air.
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