Although there have been attempts to use non‐lead based halide perovskite materials as insulating layers for resistive switching memory, the ratio of low resistance state (LRS) to high resistance state (HRS) ( = ON/OFF ratio) and/or endurance is reported to be mostly lower than 103. Resistive switching memory characteristics of layered (BzA)2CuBr4 (BzA = C6H5CH2NH3) perovskite with high ON/OFF ratio and long endurance are reported here. The X‐ray diffraction (XRD) pattern of the deposited (BzA)2CuBr4 layer shows highly oriented (00l) planes perpendicular to a Pt substrate. An Ag/PMMA/(BzA)2CuBr4/Pt device shows bipolar switching behavior. A forming step at around +0.5 V is observed before the repeated bipolar switching at the SET voltage of +0.2 V and RESET voltage of ‐0.3 V. The ON/OFF ratio as high as =108 is monitored along with an endurance of ≈2000 cycles and retention time over 1000 s. The high ON/OFF ratio enables multilevel storage characteristics as confirmed by changing the compliance currents. Ohmic conduction at the LRS and Schottky emission at HRS are involved in electrochemical metallization process. The bipolar resistive switching property is retained after storing the device at ambient condition under relative humidity of about 50% for 2 weeks, which indicates that (BzA)2CuBr4 is stable memory material.

Organic–inorganic or inorganic metal halide materials have emerged as a promising candidate for a resistive switching material owing to their ability to achieve low operating voltage, high on–off ratio, and multi‐level switching. However, the high switching variation, limited endurance, and poor reproducibility of the device hinder practical use of the memristors. In this study, a universal approach to address the issues using a van der Waals metal contact (vdWC) is reported. By transferring the pre‐deposited metal contact onto the active layers, an intact junction between the metal halide and contact layer is formed without unintended damage to the active layer caused by a conventional physical deposition process of the metal contacts. Compared with the thermally evaporated metal contact (EVC), the vdWC does not degrade the optoelectronic quality of the underlying layer to enable memristors with reduced switching variation, significantly enhanced endurance, and reproducibility relative to those based on the EVC. By adopting various metal halide active layers, versatile utility of the vdWC is demonstrated. Thus, this vdWC approach can be a useful platform technology for the development of high‐performance and reliable memristors for future computing.