A reliable process based on Chemical Mechanical Polishing (CMP) has been developed for the fabrication of high quality, deepsubmicron Nb/AlO,/Nb Josephson junctions on 2 inch wafers. The Nb counter electrode is deflned using low pressure SFc reactive ion etching (RIE) with a mask of SiO, which is thermally evaporated through a bilayer resist stencil patterned by electron beam lithography.After RIE, the entire wafer is coated with S O , which is then planarized using CMP (which also removes the etch mask) t o expose the counter electrode. This technique has produced high quality (V,,, N_ 60 mV for J, of 2 kA/cm2) junctions with areas as small as 0.003 pm2 demonstrating that the process does not degrade the junction quality. Junctions with critical currents of 22pA and areas of 0.006pm' have been fabricated from trilayers with J,
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