No abstract

Thin film solar cells based in Cu(In,Ga)Se2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.

A 27.3% photocurrent enhancement is predicted when a photonic-structured TiO2 based antireflection coating is applied.

SummaryRecent trends in photovoltaics demand ever-thin solar cells to allow deployment in consumer-oriented products requiring low-cost and mechanically flexible devices. For this, nanophotonic elements in the wave-optics regime are highly promising, as they capture and trap light in the cells' absorber, enabling its thickness reduction while improving its efficiency. Here, novel wavelength-sized photonic structures were computationally optimized toward maximum broadband light absorption. Thin-film silicon cells were the test bed to determine the best performing parameters and study their optical effects. Pronounced photocurrent enhancements, up to 37%, 27%, and 48%, respectively, in ultra-thin (100- and 300-nm-thick) amorphous, and thin (1.5-μm) crystalline silicon cells are demonstrated with honeycomb arrays of semi-spheroidal dome or void-like elements patterned on the cells' front. Also importantly, key advantages in the electrical performance are anticipated, since the photonic nano/micro-nanostructures do not increase the cell roughness, therefore not contributing to recombination, which is a crucial drawback in state-of-the-art light-trapping approaches.

Photonic micro/nano-structures in the wave-optics regime have shown to be a promising strategy for effective broadband light capture in ultra-thin devices, opening a window of opportunity for cheap, efficient, lightweight and flexible photovoltaics (PV). Here we design, from an optical standpoint, a novel industrially-attractive concept where light trapping is obtained by conformably depositing the solar cell materials onto previously-patterned photonic substrates. This solution is applied and optimized for perovskite solar cells (PSCs) with distinct thicknesses of the perovskite absorber -the conventional (500 nm) and ultra-thin (300 nm) in view of enhanced flexibility -yielding photocurrent improvements up to 22.8% in superstrate cell configuration and 24.4% in substrate-type configuration; thereby coming relatively close to the fundamental Lambertian limits. Furthermore, these structures also show an omni-direction optical response for incidence angles up to 70º for all cases, therefore demonstrating the viability of this light trapping method for implementation in flexible PV devices operating under bending. The photonic-enhanced ultra-thin solar cells designed here ultimately support the reduction of material usage in PSC technology, which is especially beneficial to mitigate lead usage, without impacting the device's performance.