We investigate single-photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0:5 m. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single-photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed singlephoton source with single-mode spontaneous emission coupling efficiencies in excess of À $ 85% and the potential to reach maximum emission rates >1 GHz.

The authors investigate the spontaneous emission dynamics of selfassembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the waveguide mode, a ∼ 21× enhancement of photoluminescence intensity is observed as compared to dots in the unprocessed region of the wafer. This enhancement can be traced back to the Purcell enhanced emission of quantum dots into leaky and guided modes of the waveguide with moderate Purcell factors up to ∼ 4×. Emission into guided modes is shown to be efficiently scattered out of the waveguide within a few microns, contributing to the out-of-plane emission and allowing the use of photonic crystal waveguides as broadband, efficiency-enhancing structures for surface-emitting diodes or single photon sources.