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Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

We propose a scheme to directly measure the entangled W states with cross-Kerr nonlinearity mediums. This scheme can measure three-photon, four-photon, and even N-photon W states in one step. Only PBSs and cross-Kerr nonlinearity mediums are used in this scheme, which is feasible for experiments. We describe the three-photon W states measurement process and extend it to four-photon and N-photon W states.

Selection of ohmic contacts to Cu 2 ZnSnS 4 (CZTS) films is one of the most crucial tasks involved in the fabrication of efficient CZTS devices. In the present work, the formation of ohmic contact with the p-type CZTS films was studied. The p-type CZTS thin films were fabricated by thermal evaporation, followed by the subsequent sulphurisation in the atmosphere of N 2 + H 2 S (5%). Ag, In, Al and Ti were chosen as the metal electrodes of the CZTS-based films. The characteristics of CZTS thin films and the structure of Mo/CZTS/M (M = Ag, In, Al and Ti) were investigated using XRD, Raman, SEM, and EDX, to name but a few. The ohmic contact property of the studied material was tested using an I-V characterisation system. The results showed that Al could form a high-quality ohmic contact with the p-type CZTS films among the metallic electrodes.