A study on the dependence of the microstructure of CNx films on N2 gas pressure was conducted in an RF magnetron sputtering system. A significant change in microstructure was observed as gas pressure decreased: the concentration of sp2 C=N and hydrogenated bonds decreased, while that of sp3 C–N and sp C≡N bonds increased. This implies that low pressure favours the synthesis of CNx films of good mechanical properties. A further investigation using a Langmuir probe and Monte Carlo collision simulations revealed that the energy of ions bombarding the film increased significantly with decreasing gas pressure. This can lead to changes in hydrogen content and chemical bonds in the growing CNx films.
This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with high transparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolved these problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetron roll-to-roll sputter system utilizing ITO and SiO 2 targets of ITO and SiO 2 . In this experiment, the effect of D.C. power, winding speed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point of sheet resistance, transmittance, and chromaticity(b*). The deposition of SiO 2 was performed with RF power of 400W, Ar gas of 50 sccm and the deposition of ITO, DC power of 600W, Ar gas of 50 sccm, O 2 gas of 0.2 sccm, and winding speed of 0.56 m/ min. High quality ITO thin films without SiO 2 layer had chromaticity of 2.87, sheet resistivity of 400 ohm/square, and transmittance of 88% and SiO 2 -doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709 ohm/square, and transmittance of more than 90% were obtained. As a result, SiO 2 was coated on PET before deposition of ITO, their chromaticity(b*) and transmittance were better than previous results of ITO films. These results show that coating of SiO 2 induced arising chromaticity(b*) and transmittance. If the thickness of SiO 2 is controlled, sheet resistance value of ITO film will be expected to be better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.
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