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In this work, SiO2/TiO2 multilayer films were deposited on silicon substrates via sol-gel spin-coating techniques with the precursors of titanium butoxide and tetraethyl orthosilicate. After the preparation studied the various optical and morphological properties by using X-ray diffractometer (XRD), Fourier transform infrared (FTIR) spectroscopy, and UV-Visible spectrometer. XRD patterns revealed the intense diffraction peaks which were found that the anatase-TiO2 and well-matched with the standard JCPDS file. With the intense peaks, calculated the crystallite size of the prepared samples are 24 nm for three stacks (3S)-SiO2/TiO2 and 30 nm for five stacks (5S)-SiO2/TiO2 thin films using Debye Scherrer’s formula.FTIR transmittance spectra were confirmed the Si-O-Ti vibrational modes at 800 and 960 cm−1 with related functional groups. The reflectance of 86% was noticed by UV-Visible spectrophotometer. These dielectric multipliers will be useful in solar cells as the backside reflectors for improved light-harvesting mechanism.