Direct bonding of gallium arsenide on silicon is studied. The technology
is expected to enable the easy integration of gallium arsenide optoelectronic
devices with silicon very-large-scale integrated circuits. The interface
quality of n-GaAs/p-Si can be improved with a thermal annealing process. It
is examined by the current-voltage characteristics of the n-GaAs/p-Si diode.
The bonding strength was found to be sufficiently high and could “high
enough to” withstand the subsequent grinding and polishing procedures of
the bonded wafers.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.