Dion-Jacobson (DJ) phase 2D layered perovskites are developed by removing the van der Waals gap between organic layers and inorganic slabs in Ruddlesden-Popper (RP) phase counterparts. The hydrogen bonding formed at both sides of diammonium cations with perovskite layers in the DJ phase 2D perovskite endows it with extremely high structural stability, compared with that at only one side in the RP phase one. The devices exhibit a PCE of 13.3% with unprecedented stability, even when subjected to very harsh testing conditions.

Pancreatic cancer is an aggressive disease with multiple biochemical and genetic alterations. Thus, a single agent to hit one molecular target may not be sufficient to treat this disease. The purpose of this study is to identify a novel Hsp90 inhibitor to disrupt protein-protein interactions of Hsp90 and its cochaperones for down-regulating many oncogenes simultaneously against pancreatic cancer cells. Here, we reported that celastrol disrupted Hsp90-Cdc37 interaction in the superchaperone complex to exhibit antitumor activity in vitro and in vivo. Molecular docking and molecular dynamic simulations showed that celastrol blocked the critical interaction of Glu 33 (Hsp90) and Arg 167 (Cdc37). Immunoprecipitation confirmed that celastrol (10 Mmol/L) disrupted the Hsp90-Cdc37 interaction in the pancreatic cancer cell line Panc-1. In contrast to classic Hsp90 inhibitor (geldanamycin), celastrol (0.1-100 Mmol/L) did not interfere with ATP binding to Hsp90. However, celastrol (1-5 Mmol/L) induced Hsp90 client protein degradation (Cdk4 and Akt) by 70% to 80% and increased Hsp70 expression by 12-fold. Celastrol induced apoptosis in vitro and significantly inhibited tumor growth in Panc-1 xenografts. Moreover, celastrol (3 mg/kg) effectively suppressed tumor metastasis by more than 80% in RIP1-Tag2 transgenic mouse model with pancreatic islet cell carcinogenesis. The data suggest that celastrol is a novel Hsp90 inhibitor to disrupt Hsp90-Cdc37 interaction against pancreatic cancer cells.

Inspired by the structural feature of the classical hole-transport material (HTM), Spiro-OMeTAD, many analogues based on a highly symmetrical spiro-core were reported for perovskite solar cells (PSCs). However, these HTMs were prone to crystallize because of the high molecular symmetry, forming non-uniform films, unfavorable for the device stability and large-area processing. By lowering the symmetry of spiro-core, we report herein a novel spirobisindane-based HTM, Spiro-I, which could form amorphous films with high uniformity and morphological stability. Compared to the Spiro-OMeTAD-based PSCs, those containing Spiro-I exhibit similar efficiencies for small area but higher ones for large area (1 cm ), and especially much higher air stability (retaining 80 % of initial PCE after 2400 h storage without encapsulation). Moreover, the Spiro-I can be synthesized from a cheap starting material bisphenol A and used with a small amount for the device fabrication.

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The power-conversion efficiency (PCE) of single-junction organic solar cells (OSCs) has exceeded 16% thanks to the development of non-fullerene acceptor materials and morphological optimization of active layer. In addition, interfacial engineering always plays a crucial role in further improving the performance of OSCs based on a well-established active-layer system. Doping of graphitic carbon nitride (g-C 3 N 4 ) into poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as a hole transport layer (HTL) for PM6:Y6-based OSCs is reported, boosting the PCE to almost 16.4%. After being added into the PEDOT:PSS, the g-C 3 N 4 as a Bronsted base can be protonated, weakening the shield effect of insulating PSS on conductive PEDOT, which enables exposures of more PEDOT chains on the surface of PEDOT:PSS core-shell structure, and thus increasing the conductivity. Therefore, at the interface between g-C 3 N 4 doped HTL and PM6:Y6 layer, the charge transport is improved and the charge recombination is suppressed, leading to the increases of fill factor and short-circuit current density of devices. This work demonstrates that doping g-C 3 N 4 into PEDOT:PSS is an efficient strategy to increase the conductivity of HTL, resulting in higher OSC performance.

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Understanding and manipulating hot electron dynamics in semiconductors may enable disruptive energy conversion schemes. Hot electrons in bulk semiconductors usually relax via electron-phonon scattering on a sub-picosecond timescale. Quantum-confined semiconductors such as quantum dots offer a unique platform to prolong hot electron lifetime through their size-tunable electronic structures. Here, we study hot electron relaxation in electron-doped (n-doped) colloidal CdSe quantum dots. For lightly-doped dots we observe a slow 1Pe hot electron relaxation (~10 picosecond) resulting from a Pauli spin blockade of the preoccupying 1Se electron. For heavily-doped dots, a large number of electrons residing in the surface states introduce picosecond Auger recombination which annihilates the valance band hole, allowing us to observe 300-picosecond-long hot electrons as a manifestation of a phonon bottleneck effect. This brings the hot electron energy loss rate to a level of sub-meV per picosecond from a usual level of 1 eV per picosecond. These results offer exciting opportunities of hot electron harvesting by exploiting carrier-carrier, carrier-phonon and spin-spin interactions in doped quantum dots.

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