Organic neutral π-monoradicals are promising semiconductors with balanced ambipolar carrier-transport abilities, which arise from virtually identical spatial distribution of their singly occupied and unoccupied molecular orbitals, SOMO(α) and SOMO(β), respectively. Herein, we disclose a boron-stabilized triphenylmethyl radical that shows outstanding thermal stability and resistance toward atmospheric conditions due to the substantial spin delocalization. The radical is used to fabricate organic Mott-insulator transistors that operate at room temperature, wherein the radical exhibits well-balanced ambipolar carrier transport properties.

We report on the fluorescence properties of a new class of emissive and stable π-radicals that contain a boron atom at a position distant from the radical center. A fully planarized derivative exhibited an intense red fluorescence with high fluorescence quantum yields (Φ F > 0.67) even in polar solvents. To elucidate the origin of this phenomenon, we synthesized another boron-stabilized radical that contains a bulky aryl group on the boron atom. A comparison of these derivatives, as well as with conventional donor-π-acceptor (D-π-A)-type emissive π-radicals, unveiled several characteristic features in their photophysical properties. A theoretical analysis revealed that the SOMO-LUMO electronic transition generates an emissive D 1 state. Unlike conventional D-π-A-type π-radicals, this state does not undergo significant structural relaxation. The boronstabilized π-radicals demonstrated promising potential for organic light-emitting diodes as an emitting material.

We report on the fluorescence properties of a new class of emissive and stable π‐radicals that contain a boron atom at a position distant from the radical center. A fully planarized derivative exhibited an intense red fluorescence with high fluorescence quantum yields (ΦF >0.67) even in polar solvents. To elucidate the origin of this phenomenon, we synthesized another boron‐stabilized radical that contains a bulky aryl group on the boron atom. A comparison of these derivatives, as well as with conventional donor–π–acceptor (D–π–A)‐type emissive π‐radicals, unveiled several characteristic features in their photophysical properties. A theoretical analysis revealed that the SOMO–LUMO electronic transition generates an emissive D1 state. Unlike conventional D–π–A‐type π‐radicals, this state does not undergo significant structural relaxation. The boron‐stabilized π‐radicals demonstrated promising potential for organic light‐emitting diodes as an emitting material.