Exploitation of efficient and stable photocatalyst for water splitting is pressing to solve the energy crisis. Four CdS@MoS 2 nano-heterojunctions were prepared by a single precursor thermal decomposition combined with one-step hydrothermal method. The morphology of the prepared samples is spherical and has obvious core-shell structure interface. The photocurrent of CdS@MoS 2 -2 wt% is the largest, which is more over 40 times that of the pure CdS. In addition, CdS@MoS 2 -2 wt% had superior photocatalytic H 2 generation activity (20.23 mmol g À 1 h À 1 ) without any noble metal as a cocatalyst under visible light and show marked photocatalytic durability after a continuous test for 16 hours. This work provides a new insight for the design of core-shell nano-heterojunctions for other metal sulfide composites.
By using the finite difference time domain method, the localized surface plasmon extinction spectrum of different sizes of spherical gold and silver nanoparticles were simulated and analyzed in external environments with various refractive indices. It was observed that the changes in
the position of the resonance wavelength were linearly proportional to the external refractive index, while the sensitivity increased with nanoparticle size. The sensitivity of the spherical silver nanoparticles with a radius of 40 nm reached 122 nm/RIU. For the silver and gold nanoparticles
of the same size, the sensitivity of the silver nanoparticles was greater than that of the gold nanoparticles. In the experiment, the spectral characteristics of the silver nanoparticles with different sizes under various external refractive indices were measured. The experimental results
were consistent with the simulation results. The resonance wavelength and the concentration of the solution showed a good linear relationship. By using the sensitive properties of the nanoparticles such as external refractive index, the amount of sucrose in the solution can be measured.
We have developed a novel passivation process employing a sacrificial GaO x process to suppress the current collapse phenomenon in AlGaN/GaN HFETs. Even with a conventional prepassivation process, surface damage during high temperature ohmic annealing cannot be avoided completely, which in turn induces surface trapping states. In this proposed process, the damaged surface after high temperature ohmic annealing was removed by a sacrificial GaO x process prior to SiO 2 surface passivation. As a result, surface damage induced trapping effects were successfully suppressed.
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