The crystallization processes of amorphous Ge as well as the atomistic structures of the growth front were examined by molecular-dynamics simulations. An amorphous Ge network was annealed in a thermal bath with a temperature gradient. Crystallization proceeded via the supercooled liquid, and changed from random nanocrystallization to large oriented grain growth. The resultant structures qualitatively reproduced the explosive crystallization observed with pulsed-laser irradiation and flash lamp annealing. The supercooled liquid was found to transform from a tetrahedral liquid to a more highly-coordinated liquid with increasing temperature, which was attributed to the change in growth mode.
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