Intrinsic radiative lifetime is an essential physical property of low-dimensional excitons that represents their optical transition rate and wavefunction, which directly measures the probability of finding an electron and a hole at the same position in an exciton. However, the conventional method that is used to determine this property via measuring the temperature-dependent photoluminescence (PL) decay time involves uncertainty due to various extrinsic contributions at high temperatures. Here, we propose an alternative method to derive the intrinsic radiative lifetime via temperature-independent measurement of the absorption cross section and transformation using Einstein's A-B-coefficient equations derived for low-dimensional excitons. We experimentally verified our approach for one-dimensional (1D) excitons in high-quality 14 × 6 nm2 quantum wires by comparing it to the conventional approach. Both independent evaluations showed good agreement with each other and with theoretical predictions. This approach opens a promising path to studying low-dimensional exciton physics.
β-l-Arabinofuranosidase HypBA1 from Bifidobacterium longum belongs to the glycoside hydrolase family 127. At the active site of HypBA1, a cysteine residue (Cys417) coordinates with a Zn2+ atom and functions as the catalytic nucleophile for the anomer-retaining hydrolytic reaction. In this study, the role of Zn2+ ion and cysteine in catalysis as well as the substrate-bound structure were studied based on biochemical and crystallographic approaches. The enzymatic activity of HypBA1 decreased after dialysis in the presence of EDTA and guanidine hydrochloride and was then recovered by the addition of Zn2+. The Michaelis complex structure was determined using a crystal of a mutant at the acid/base catalyst residue (E322Q) soaked in a solution containing the substrate p-nitrophenyl-β-l-arabinofuranoside. To investigate the covalent thioglycosyl enzyme intermediate structure, synthetic inhibitors of l-arabinofuranosyl haloacetamide derivatives with different anomer configurations were used to target the nucleophilic cysteine. In the crystal structure of HypBA1, β-configured l-arabinofuranosylamide formed a covalent link with Cys417, whereas α-configured l-arabinofuranosylamide was linked to a noncatalytic residue Cys415. Mass spectrometric analysis indicated that Cys415 was also reactive with the probe molecule. With the β-configured inhibitor, the arabinofuranoside moiety was correctly positioned at the subsite and the active site integrity was retained to successfully mimic the covalent intermediate state.
Smear residue from the build-up dielectric material is left at the bottom of the microvia after laser drill process which, if not cleaned, poses risk to the electrical functionality of the device. Thus, microvia cleanliness is the key to a reliable and electrically functional device. Currently, industry employs a wet process to clean the etch residue that results in significant chemical waste. Here, we evaluated an alternative, but effective Photodesmear method that provides a low cost of ownership and almost negligible environmental impact. We have demonstrated in IMAPS 2013 that this process can achieve residue- and silica filler free via bottoms by a two-step process: i) illuminating 172 nm vacuum ultraviolet light (VUV) on the panels, resulting in a photochemical ashing, and ii) a water clean. This process does not reduce the surface energy of the build-up material, thus not impacting the downstream processes. The main technical challenge in developing Photodesmear technology will be panel level uniformity in cleaning all the microvias within the same process step. We have demonstrated that our process can achieve a highly uniform treatment over 510 mm wide panels. The process was optimized to clean microvias with a range of aspect ratios on insulating film (material N) drilled by CO2 laser. The microvia bottoms were also found to be clean when the vias were drilled by UV laser to test the desmear capability. The quality of the Photodesmear was tested by measuring the peel strength between electrolytically plated Cu and dielectric surface, and by performing the quick via pull (QVP) to verify the failing interface. We found high peel strength of 0.7 kgf/cm when sputtered Cu seed layer was used. QVP experiments confirmed that the via residue is cleaned effectively since the interface between the plated Cu and the underlying Cu pad did not fail. This study shows that Photodesmear process is capable to produce clean vias along with acceptable peel strength. Future issues are to research the reliability, productivity, and cost of the Photodesmear process to compare with the existing process.
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