Inducing magnetism in a topological insulator (TI) by exchange coupling with a ferromagnetic insulator (FMI) will break the time-reversal symmetry of topological surface states, offering possibilities to realize several predicted novel magneto-electric effects. Seeking suitable FMI materials is crucial for the coupling of heterojunctions, and yet is challenging as well and only a few kinds have been explored. In this report, we introduce epitaxial LaCoO3 thin films on a SrTiO3 substrate, which is an insulating ferromagnet with a Curie temperature of TC ∼ 85 K, to be combined with TIs for proximity coupling. Thin films of the prototype topological insulator, Bi2Se3, are successfully grown onto the (001) surface of LaCoO3/SrTiO3, forming a high-quality TI/FMI heterostructure with a sharp interface. The magnetic and transport measurements manifest the emergence of a ferromagnetic phase in Bi2Se3 films, with additional induced moments and a suppressed weak antilocalization effect, while preserving the carrier mobility of the intrinsic Bi2Se3 films at the same time. Moreover, a signal of an anomalous Hall effect is observed and persists up to temperatures above 100 K, paving the way towards spintronic device applications.
The magnetization and electrical transport in the superlattices consisting of ferromagnetic La0.67Sr0.33MnO3 and nonmagnetic insulating SrTiO3 layers have been investigated. A significant displacement of the hysteresis loop along the field axis is observed when the sample is field-cooled through the blocking temperature TB. The strength of displacement, termed as exchange field HE, is found to exponentially decay with temperature. The magnetoresistance in field-cooling process is obviously enhanced compared to that in zero-field-cooling process. The existence of the disordered spin state at the interface is suggested to be the origin of such phenomena.
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