The semiconductor industry is increasingly of the view that Moore's law-which predicts the biennial doubling of the number of transistors per microprocessor chip-is nearing its end. Consequently, the pursuit of alternative semiconducting materials for nanoelectronic devices, including single-walled carbon nanotubes (SWNTs), continues. Arrays of horizontal nanotubes are particularly appealing for technological applications because they optimize current output. However, the direct growth of horizontal SWNT arrays with controlled chirality, that would enable the arrays to be adapted for a wider range of applications and ensure the uniformity of the fabricated devices, has not yet been achieved. Here we show that horizontal SWNT arrays with predicted chirality can be grown from the surfaces of solid carbide catalysts by controlling the symmetries of the active catalyst surface. We obtained horizontally aligned metallic SWNT arrays with an average density of more than 20 tubes per micrometre in which 90 per cent of the tubes had chiral indices of (12, 6), and semiconducting SWNT arrays with an average density of more than 10 tubes per micrometre in which 80 per cent of the nanotubes had chiral indices of (8, 4). The nanotubes were grown using uniform size MoC and WC solid catalysts. Thermodynamically, the SWNT was selectively nucleated by matching its structural symmetry and diameter with those of the catalyst. We grew nanotubes with chiral indices of (2m, m) (where m is a positive integer), the yield of which could be increased by raising the concentration of carbon to maximize the kinetic growth rate in the chemical vapour deposition process. Compared to previously reported methods, such as cloning, seeding and specific-structure-matching growth, our strategy of controlling the thermodynamics and kinetics offers more degrees of freedom, enabling the chirality of as-grown SWNTs in an array to be tuned, and can also be used to predict the growth conditions required to achieve the desired chiralities.

Natural gas (Methane) is currently the primary source of catalytic hydrogen production, accounting for three quarters of the annual global dedicated hydrogen production (about 70 M tons). Steam–methane reforming (SMR) is the currently used industrial process for hydrogen production. However, the SMR process suffers with insufficient catalytic activity, low long-term stability, and excessive energy input, mostly due to the handling of large amount of CO2 coproduced. With the demand for anticipated hydrogen production to reach 122.5 M tons in 2024, novel and upgraded catalytic processes are desired for more effective utilization of precious natural resources. In this review, we summarized the major descriptors of catalyst and reaction engineering of the SMR process and compared the SMR process with its derivative technologies, such as dry reforming with CO2 (DRM), partial oxidation with O2, autothermal reforming with H2O and O2. Finally, we discussed the new progresses of methane conversion: direct decomposition to hydrogen and solid carbon and selective oxidation in mild conditions to hydrogen containing liquid organics (i.e., methanol, formic acid, and acetic acid), which serve as alternative hydrogen carriers. We hope this review will help to achieve a whole picture of catalytic hydrogen production from methane.

With the maximum atom-utilization efficiency, single atom catalysts (SACs) have attracted great research interest in catalysis science recently. To address the following key challenges for the further development of SACs: i) how to stabilize and avoid the aggregation of SACs, ii) how to enhance the specific surface area and conductivity of supports, and iii) how to achieve scalable mass production with low cost, a SAC consisting of single Pd atoms anchored on well-designed graphdiyne/graphene (GDY/G) heterostructure (Pd 1 /GDY/G) is synthesized. Pd 1 /GDY/G exhibits high catalytic performance, as demonstrated by the reduction reaction of 4-nitrophenol. Furthermore, density functional theory calculation indicates that graphene in the GDY/G heterostructure plays a key role in the enhancement of catalytic efficiency owing to the electron transfer process, deriving from the gap between the Fermi level of graphene and the conduction band minimum of GDY. The GDY/G heterostructure is a promising support for the preparation of extremely efficient and stable SACs, which can be used in a broad range of future industrial reactions.

Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future. These applications require high-density horizontally aligned SWNT arrays. During the past decade, significant efforts have been directed towards growth of high-density SWNT arrays. However, obtaining SWNT arrays with suitable density and quality still remains a big challenge. Herein, we develop a rational approach to grow SWNT arrays with ultra-high density using Trojan catalysts. The density can be as high as 130 SWNTs mm À 1 . Field-effect transistors fabricated with our SWNT arrays exhibit a record drive current density of À 467.09 mA mm À 1 and an on-conductance of 233.55 mS mm À 1 . Radio frequency transistors fabricated on these samples exhibit high intrinsic f T and f MAX of 6.94 and 14.01 GHz, respectively. These results confirm our high-density SWNT arrays are strong candidates for applications in electronics.

A major obstacle for the applications of single-walled carbon nanotubes (SWNTs) in electronic devices is their structural diversity, ending in SWNTs with diverse electrical properties. Catalytic chemical vapor deposition has shown great promise in directly synthesizing high-quality SWNTs with a high selectivity to specific chirality (n, m). During the growth process, the tube-catalyst interface plays crucial roles in regulating the SWNT nucleation thermodynamics and growth kinetics, ultimately governing the SWNT chirality distribution. Starting with the introduction of SWNT growth modes, this review seeks to extend the knowledge about chirality-selective synthesis by clarifying the energetically favored SWNT cap nucleation and the threshold step for SWNT growth, which describes how the tube-catalyst interface affects both the nucleus energy and the new carbon atom incorporation. Such understandings are subsequently applied to interpret the (n, m) specific growth achieved on a variety of templates, such as SWNT segments or predefined molecular seeds, transition metal (Fe, Co and Ni)-containing catalysts at low reaction temperatures, W-based alloy catalysts, and metal carbides at relatively high reaction temperatures. The up to date achievements on chirality-controlled synthesis of SWNTs is summarized and the remaining major challenges existing in the SWNT synthesis field are discussed.

The growth kinetics play key roles in determining the chirality distribution of the grown single-walled carbon nanotubes (SWCNTs). However, the lack of comprehensive understandings on the SWCNT’s growth mechanism at the atomic scale greatly hinders SWCNT chirality-selective synthesis. Here, we establish a general model, where the dislocation theory is a specific case, to describe the etching agent–dependent growth kinetics of SWCNTs on solid catalyst particles. In particular, the growth kinetics of SWCNTs in the absence of etching agent is validated by both in situ environmental transmission electron microscopy and ex situ chemical vapor deposition growth of SWCNTs. On the basis of the new theory of SWCNT’s growth kinetics, we successfully explained the selective growth of (2n, n) SWCNTs. This study provides another degree of freedom for SWCNT controlled synthesis and opens a new strategy to achieve chirality-selective synthesis of (2n, n) SWCNTs using solid catalysts.

Semiconducting single-walled nanotube (s-SWNT) arrays with specific diameters are urgently demanded in the applications in nanoelectronic devices. Herein, we reported that by using uniform Mo2C solid catalyst, aligned s-SWNT (∼90%) arrays with narrow-diameter distribution (∼85% between 1.0 and 1.3 nm) on quartz substrate can be obtained. Mo2C nanoparticles with monodisperse sizes were prepared by using molybdenum oxide-based giant clusters, (NH4)42[Mo132O372(H3CCOO)30(H2O)72]·10H3CCOONH4·300H2O(Mo132), as the precursor that was carburized by a gas mixture of C2H5OH/H2 during a temperature-programmed reduction. In this approach, the formation of volatile MoO3 was inhibited due to the annealing and reduction at a low temperature. As a result, uniform Mo2C nanoparticles are formed, and their narrow size-dispersion strictly determines the diameter distribution of SWNTs. During the growth process, Mo2C selectively catalyzes the scission of C-O bonds of ethanol molecules, and the resultant absorbed oxygen (Oads) preferentially etches metallic SWNTs (m-SWNTs), leading to the high-yield of s-SWNTs. Raman spectroscopic analysis showed that most of the s-SWNTs can be identified as (14, 4), (13, 6), or (10, 9) tubes. Our findings open up the possibility of the chirality-controlled growth of aligned-SWNTs using uniform carbide nanoparticles as solid catalysts for practical nanoelectronics applications.

Single-walled carbon nanotubes (SWNTs) emerge as a promising material to advance carbon nanoelectronics. However, synthesizing or assembling pure metallic/semiconducting SWNTs required for interconnects/integrated circuits, respectively, by a conventional chemical vapor deposition method or by an assembly technique remains challenging. Recent studies have shown significant scientific breakthroughs in controlled SWNT synthesis/assembly and applications in scaled field effect transistors, which are a critical component in functional nanodevices, thereby rendering the horizontal SWNT array an important candidate for innovating nanotechnology. This review provides a comprehensive analysis of the controlled synthesis, surface assembly, characterization techniques, and potential applications of horizontally aligned SWNT arrays. This review begins with the discussion of synthesis of horizontally aligned SWNTs with regulated direction, density, structure, and theoretical models applied to understand the growth results. Several traditional procedures applied for assembling SWNTs on target surface are also briefly discussed. It then discusses the techniques adopted to characterize SWNTs, ranging from electron/probe microscopy to various optical spectroscopy methods. Prototype applications based on the horizontally aligned SWNTs, such as interconnects, field effect transistors, integrated circuits, and even computers, are subsequently described. Finally, this review concludes with challenges and a brief outlook of the future development in this research field.