A novel 3-fold dynode structure was introduced into the CNT-FED for improving its uniformity and electron amplification. The 0.5" and 5.6" dynode of metal plates was etched with numerous holes of various cross-sections and coated oxides to supply high efficient passage for electrons. Experiments have been carried out to study the effects of oxides and oxide film thickness on the electron multiplication of dynodes. We observed that several metal plates not only shield the cathode from the high electric field of anode, but also distribute uniform electrons inside each pixel cavity. At present the 3-fold dynode exhibits electron multiplication factors larger than, but close to, unity.
In chemical vapor deposition (CVD) technology, the mass flow transport behaviors of precursor gases play an important role particularly in thick-film normal triode structures. The depth dimension of dielectric holes in thick-film normal triode structures may range from 10 to 50 mm. The relationship between carbon nanotube (CNT) synthesis and aspect ratio of dielectric holes is investigated in this work. In high-aspect-ratio dielectric holes (such as narrow and deep holes), precursor diffusion driven by concentration gradient must be combined with pumping assistance in order to force reactive gas to flow toward the catalyst at the bottom of dielectric holes for CNT growth.
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