a b s t r a c tTopologically interlocked materials (TIMs) are a class of materials made by a structured assembly of an array of identically shaped and sized unit elements that are held in a confining framework. The assembly can resist transverse forces in the absence of adhesives between the unit elements. The present study focuses on topologically interlocked materials with cellular unit elements. The resulting materials achieve their properties by a combination of deformation of the individual unit elements and their contact interaction. Drop tower tests were conducted to characterize the mechanical behavior of the cellular TIMs made of an intrinsically brittle base material. The TIMs were found to exhibit perfect softening, independent of the relative density of the cellular units. The analysis of the experiments revealed a positive correlation between strength and toughness in contrast to more conventional materials. An analytical model for the prediction of the observed material behavior is developed. Model predictions are in agreement with experimental data. The implications of the present findings for the design of these novel materials are discussed.
Chalcogenide perovskites have garnered interest for applications in semiconductor devices due to their excellent predicted optoelectronic properties and stability. However, high synthesis temperatures have historically made these materials incompatible with the creation of photovoltaic devices. Here, we demonstrate the solution processed synthesis of luminescent BaZrS3 and BaHfS3 chalcogenide perovskite films using single‐phase molecular precursors at sulfurization temperatures of 575 °C and sulfurization times as short as one hour. These molecular precursor inks were synthesized using known carbon disulfide insertion chemistry to create Group 4 metal dithiocarbamates, and this chemistry was extended to create species, such as barium dithiocarboxylates, that have never been reported before. These findings, with added future research, have the potential to yield fully solution processed thin films of chalcogenide perovskites for various optoelectronic applications.
Topologically interlocked materials (TIMs) are a class of 2D mechanical crystals made by a structured assembly of an array of polyhedral elements. The monolayer assembly can resist transverse forces in the absence of adhesive interaction between the unit elements. The mechanical properties of the system emerge as a combination of deformation of the individual unit elements and their contact interaction. The present study presents scaling laws relating the mechanical stiffness of monolayered TIMs to the system characteristic dimensions. The concept of thrust line analysis is employed to obtain the scaling laws, and model predictions are validated using finite element simulations as virtual experiments. Scaling law powers were found to closely resemble those of classical plate theory despite the distinctly different underlying mechanics and theory of TIM deformation.
ABSTRACT:Topologically interlocked material systems are two-dimensional granular crystals created as ordered and adhesion-less assemblies of unit elements of the shape of platonic solids. The assembly resists transverse forces due to the interlocking geometric arrangement of the unit elements. Topologically interlocked material systems yet require an external constraint to provide resistance under the action of external load.Past work considered fixed and passive constraints only. The objective of the present study is to consider active and adaptive external constraints with the goal to achieve variable stiffness and energy absorption characteristics of the topologically interlocked material system through an active control of the in-plane constraint conditions. Experiments and corresponding model analysis are used to demonstrate control of system stiffness over a wide range, including negative stiffness, and energy absorption characteristics.The adaptive characteristics of the topologically interlocked material system are shown to solve conflicting requirements of simultaneously providing energy absorption while keeping loads controlled.Potential applications can be envisioned in smart structure enhanced response characteristics as desired in shock absorption, protective packaging and catching mechanisms.
Chalcogenide perovskites have garnered interest for applications in semiconductor devices due to their excellent predicted optoelectronic properties and stability. However, high synthesis temperatures have historically made these materials incompatible with the creation of photovoltaic devices. Here, we demonstrate the solution processed synthesis of luminescent BaZrS3 and BaHfS3 chalcogenide perovskite films using single‐phase molecular precursors at sulfurization temperatures of 575 °C and sulfurization times as short as one hour. These molecular precursor inks were synthesized using known carbon disulfide insertion chemistry to create Group 4 metal dithiocarbamates, and this chemistry was extended to create species, such as barium dithiocarboxylates, that have never been reported before. These findings, with added future research, have the potential to yield fully solution processed thin films of chalcogenide perovskites for various optoelectronic applications.
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