Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi 2 Te 3 and Bi 2 Se 3 crystals. We review theoretical models, materials properties and experimental results on two-dimensional and three-dimensional topological insulators, and discuss both the topological band theory and the topological field theory. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. We review the theory of topological superconductors in close analogy to the theory of topological insulators.

We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the electronic state changes from a normal to an "inverted" type at a critical thickness d c . We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss the methods for experimental detection of the QSH effect.

Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e 2 /h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field.