Irradiation of fast particles like 1 MeV electrons and 2 MeV protons was made for single crystalline cubic silicon carbide (3C‐SiC) grown epitaxially on Si by chemical vapor deposition in order to introduce point defects in the material. Intrinsic point defects in 3C‐SiC have been characterized by electron spin resonance (ESR), positron annihilation spectroscopy (PAS), Hall and photoluminescence (PL) techniques. The structure and annealing behavior of intrinsic defects, e.g. monovacancies at silicon and carbon sublattice sites, are described based on the results obtained by ESR and PAS. The contributions of such point defects to electrical and optical properties of 3C‐SiC are discussed using the Hall and PL results, with a brief review of published work.
An approximate continuum theory for interaction between dislocation and inhomogeneity of any shape and properties J. Appl. Phys. 109, 113529 (2011) Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon J. Appl. Phys. 109, 073521 (2011) Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities J. Appl. Phys. 109, 033504 (2011) Low-temperature acoustic properties of nanostructured zirconium obtained by intensive plastic deformation Low Temp.The isochronal and isothermal annealing characteristics of acceptor-doped GaAs:Be grown at low substrate temperatures (300 "C) by molecular-beam epitaxy (LTMBE) have been studied. The Be was introduced in a range of concentrations from lOi to 1019 cm -3. Electrical measurements of as-grown material up to the highest Be concentration of lOI cm -3 show that no free holes are contributed to the valence band even though Raman spectroscopy of the Be local vibrational mode indicates that the majority of the Be impurities occupy substitutional sites. It is proposed that Be acceptors are rendered inactive by the high concentration of Aso,-related native donor defects present in LTMBE material. The concentration of Aso,-related defects in the neutral charge state was estimated from infrared absorption measurements to be as high as 3 X 1019 cm -3. A distinct annealing stage at 5OO.Y!, similar to that found in irradiation-damaged and plastically deformed GaAs, marks a rapid decrease in the concentration of As o,-related defects. A second annealing stage near 800 "C corresponds to the activation of Be acceptors. The presence of gallium vacancies V,, was investigated by slow positron annihilation. Results indicate an excess concentration of Voa in LTMBE layers over bulk-grown crystals. Analysis of isothermal annealing kinetics for the removal of Aso=-related defects gives an activation energy of 1.7 kO.3 eV. The defect removal mechanism is modeled with VG,-assisted diffusion of AsGa to As precipitates.
Annealing properties of defects in F+- and B+-implanted Si were studied using monoenergetic positron beams. For F+-implanted specimen with a dose of 2×1013 F/cm2, before annealing treatment, the mean size of the open volume of defects was estimated to be close to the size of divacancies. After rapid thermal annealing (RTA) at 700° C, vacancy-fluorine complexes and vacancy clusters were formed. The mean size of the open volume for the vacancy-fluorine complexes was estimated to be close to the size of monovacancies, and their annealing temperature was determined to be 800° C. For F+-implanted specimen with a dose of 4×1015 F/cm2, complexes between vacancy clusters and fluorine atoms were introduced during solid-phase epitaxial growth of the amorphous region, and they were observed even after RTA at 1100° C. Effects of additional B+ implantation on annealing properties of defects are also discussed.
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