We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that the low-voltage radio frequency (RF) biasing of the growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ ≤ 1 · 10 −3 Ω cm). The films prepared with additional RF biasing possess lower free carrier concentration and higher free carrier mobility than the Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the NIR spectral region. Furthermore, these films exhibit good ambient stability, and lower high temperature stability than the AZO films of the same thickness.We also present the characteristics of Cu (
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