In this article, we have presented the effect of low gate bias on short circuit current gain h21 beyond cutoff frequency in AlGaN/GaN HEMT. A small-signal model, based on its intrinsic and extrinsic parameter values, is simulated beyond the cutoff frequency to analyze the current gain peaks. In this study, it has been observed that the first peak of short circuit current gain has the resonance frequency as well as magnitude variation with respect to low gate voltages. While the second peak of the current gain h21 has only magnitude dependency on low gate voltage with fixed resonance frequency. The relevance of this study is to provide a comprehensive insight to the circuit designer to efficiently consider these windows of current gain peak beyond the cutoff frequency into their design. For this study, we have taken AlGaN/GaN HEMT device with a channel length of 0.8 μm and 2×200 μm2 gate width. A measured S-parameter data up to 40 GHz at low gate bias is used to extract the model parameters.
In this paper, we present an improved analytical model for predicting thermal noise in high-electron-mobility transistors (HEMTs) that considers the material's intrinsic properties at the nanoscale, specifically, its permittivity and melting point. The developed model is validated by comparing the results obtained from the computer simulation with experimental data for different device structures fabricated from an AlGaN/GaN-based two-dimensional electron gas. Furthermore, it is demonstrated that the nanoscale material's structural properties have to be considered to estimate the noise characteristics of the HEMT device accurately.
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