The responses of Cu/Cr-p-type silicon and Au-n-type silicon Schottky barrier solar cells at higher temperatures have been studied. The variations of different factors, such as intrinsic carrier density, energy gap, absorption coefficient, barrier height, effective number of photons etc., have been taken into account. The results show that in the temperature range 300-450K, except for the short-circuit current, all other factors (e.g. open-circuit voltage, fill-factor and conversion efficiency) decrease with increase in temperature.
The interfacial layer in a Schottky barrier solar cell plays an important role in reducing the dark current, which in turn improves the open-circuit voltage and the efficiency of the solar cell. From the transmission of electrons and holes across the interfacial layer the authors have analysed the current mechanism in a Schottky barrier solar cell under two approximations. It is shown that the efficiency of the cell increases at first with the interfacial layer thickness delta , and after acquiring a maximum value falls with a further increase of delta . The variation with delta of Isc, the short-circuit current, Voc the open-circuit voltage and FF the fill factor are also discussed.
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