The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A III B V semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures.
Spin-dependent tunneling in symmetric and asymmetric double-barrier semiconductor heterostructures is studied. The effective one-band Hamiltonian approximation and spin-dependent boundary conditions approach are used for a theoretical investigation of the influence of electron spin on the tunneling probability. It is shown that spin-orbit splitting in the dispersion relation for electrons in A III B V semiconductors can provide the dependence of the tunneling transmission probability on the electron-spin polarization without additional magnetic field. The dependence can be controlled by an external electric field, and may be significant for realistic models of double-barrier semiconductor heterostructures. ͓S0163-1829͑99͒02320-6͔
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