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Colorectal cancer (CRC) is a prevalent disease and represents a major cause of morbidity and mortality in the developed world. Intensive post-treatment surveillance is routinely recommended by major expert groups for early stage (II and III) CRC survivors because previous meta-analyses showed a modest, but significant survival benefit. This practice has been recently challenged based on data emerging from several large phase III randomized trials that demonstrated a lack of survival benefit from intensive surveillance strategies. In addition, findings from cost-effectiveness analyses of such an approach are inconsistent. Data on real-world practice, specifically adherence to these follow-up guidelines, are also limited. The debate is especially controversial in resected stage IV patients where there are currently no clear guidelines for follow-up. In an era of personalized medicine, there may be a shift towards a more risk-adapted approach to better define the optimal follow-up strategy. In this article, we review the evidence and highlight the role of surveillance in CRC survivors.

A stress accumulation-peeling mechanism can be applied to measure the adhesion energy of graphite.

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The synthesis of large NbS2 single crystals benefits from Na–Nb–O droplet interfaces, which reduces nucleation density and increases growth rate.

Since the discovery of angiogenesis and its relevance to the tumorigenesis of gynecologic malignancies, a number of therapeutic agents have been developed over the last decade, some of which have become standard treatments in combination with other therapies. Limited clinical activity has been demonstrated with anti-angiogenic monotherapies, and ongoing trials are focused on combination strategies with cytotoxic agents, immunotherapies and other targeted treatments. This article reviews the science behind angiogenesis within the context of gynecologic cancers, the evidence supporting the targeting of these pathways and future directions in clinical trials.

The photoelectronic properties of SnS2 flakes have been widely studied due to the abundance and environmentally friendly qualities of this material. However, the defects and residual molecules adsorbed on the SnS2 surface can have a negative influence on the photoelectronic current and photo-response time. In this paper we examine the effects of these two factors on the photoelectronic currents of SnS2 flakes. Defects on a single crystal SnS2 surface are fabricated using hydrogen and oxygen plasma and are characterized by atomic force microscopy, confocal micro-Raman spectroscopy and photoluminescence spectroscopy. Doping by oxygen plasma can be demonstrated by x-ray photoelectron spectroscopy. Both the photoelectronic current and the switching speed (on and off times) are reduced after hydrogen plasma treatment. However, oxygen plasma has two effects on SnS2 thin film transistors. First, oxygen plasma can remove the residual molecules within a short irradiation time. In this case, the photoelectronic current of SnS2 treated with oxygen plasma is enhanced several times. Second, with a longer treatment time oxygen plasma induces many defects and doping on the SnS2 flake surface, as reflected in the reduced photoelectronic current and switching speed. Results of this work have significant practical applications for photoelectronic detection with SnS2 flakes.