Photothermal
detectors have attracted tremendous research interest
in uncooled infrared imaging technology but with a relatively slow
response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated
as a photothermal detector to realize high-performance infrared response
beyond the bandgap limitation. Vertically standing SnSe-NR arrays
are deposited on Si by a sputtering method. Through manipulating the
photoinduced thermoelectric (PTE) behavior along the c-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage
photoresponse with a high photoresponsivity of 106.3 V W–1 and high optical detectivity of 1.9 × 1010 cm Hz1/2 W–1 under 1342 nm illumination. Importantly,
an ultrafast infrared photothermal response is achieved with the rise/fall
time of 11.3/258.7 μs. Moreover, the coupling effect between
the PTE behavior and external thermal excitation enables an improved
response by 288.4%. The work not only offers a new strategy to develop
high-speed photothermal detectors but also performs a deep understanding
of the PTE behavior in a heterojunction system.
Due to its striking optical, electrical and mechanical properties, cadmium telluride (CdTe) has received tremendous interest in developing next-generation optoelectronic devices. However, the stretchable photodetectors (PDs) based on high-quality CdTe...
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