Hybrid inorganic-organic perovskites have quickly evolved as a promising group of materials for solar cells and optoelectronic applications mainly owing to the inexpensive materials, relatively simple and versatile fabrication and high power conversion efficiency (PCE). The certified energy conversion efficiency for perovskite solar cell (PSC) has reached above 20%, which is compatible to the current best for commercial applications. However, long-term stabilities of the materials and devices remain to be the biggest challenging issue for realistic implementation of the PSCs. This article discusses the key issues related to the stability of perovskite absorbing layer including crystal structural stability, chemical stability under moisture, oxygen, illumination and interface reaction, effects of electron-transporting materials (ETM), hole-transporting materials (HTM), contact electrodes and preparation conditions. Towards the end, prospective strategies for improving the stability of PSCs are also briefly discussed and summarized. We focus on recent understanding of the stability of materials and devices and our perspectives about the strategies for the stability improvement.
The breakthrough of organometal halide perovskite solar cells (PSCs) based on mesostructured composites is regarded as a viable member of next generation photovoltaics. In high efficiency PSCs, it is crucial to finely optimize the charge dynamics and optical properties matching between the perovskites and electron transporting materials to relax the trade‐off between the optical and electrical requirements. Here, a simple antipolar route with H
2
O as the additive is proposed to prepare hierarchical electron transporting layers to boost the efficiency of dopant‐free PSCs. The photovoltaic performance of the PSCs is enhanced owing to increased light‐scattering, improved Ostwald ripening, and photo‐generated electron extraction. Optimization of the H
2
O addition enables a valid power conversion efficiency of 19.9% (reverse scan: 20.02%) to be achieved. The device can retain more than 90% of its initial performance after storage in air more than 30 days. These results are inspiring in that they present that a mesoporous transporting layer could be easily re‐constructed to hierarchical architecture by the antipolar method to further improve the performance of PSCs.
A reproducible p-type P-N codoped ZnO [ZnO:(P, N)] film with high quality was achieved by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 3.98 Xcm, Hall mobility of 1.35 cm 2 /Vs, and carrier concentration of 1.16 Â 10 18 cm À3 , which is better than electrical properties of the p-type N-doped ZnO (ZnO:N) and p-type P-doped ZnO (ZnO:P) films. Additionally, the p-ZnO:(P, N)/n-ZnO homojunction showed a clear p-n diode characteristic. The p-type conductivity of ZnO:(P, N) is attributed to the formation of an impurity band above the valance band maximum, resulting in a reduction in the band gap and a decrease in the ionization energy of the acceptor, as well as an improvement in the conductivity and stability of the p-type ZnO:(P, N).
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