Tip surfaces of n-type Si field emitter arrays (FEAs) have been anodized to obtain n-type porous layers on the top surfaces of the Si emitters. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler–Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tip could be decreased and the field conversion factor could be increased by the process.
Pt emitters were deposited using electron-beam-induced reaction on overetched Si emitters fabricated by a conventional dry etching process. An emission current of 10 µA was obtained from a 100-tip field emitter array (FEA) at an extraction voltage of 100 V. A prototype of a nanometer-sized field emitter was fabricated using focused ion beam (FIB) etching and electron-beam-induced deposition (EBID).
Stripe ribs make address discharge more stable than box ribs due presumably to the priming particles provided from vertically neighboring cells. Discharge deactivation film (DDF) of low material, which selectively covers an MgO surface so as to fold the relative bus lines, improves the address discharge response dramatically because DDF pushes the address discharge area closer to the surface discharge gap. A TiO2 under-layer for phosphor also significantly improves the response. Presumably the electrification characteristic of the layer, which may depends on the surface treatment onto the TiO2 grains, contributes much to the formation of an electric field for generating face-to-face address discharge. Using these in our 46-in. HD-PDP, Xe15%(by volume) is acceptable with respect to practical driving for TV use if the dielectric layer is arranged thinly to prevent extremely high sustain voltage. Thus white peak luminance and luminous efficiency of 1220 cd/m2 and 2.16 lm/W, respectively, can be achieved.
Poly‐Si TFTs were fabricated by both a YAG2ω laser and an excimer laser annealing system using a same TFT manufacturing process, and the electrical characteristics of the TFTs were compared. As a result, it is found that a wider process window can be obtained with the YAG2ω laser annealing system. The possibility of overlapped irradiation is also shown.
A light emitting diode (LED) with a Au/porous Si/poly(2-methoxy-5-dodecyloxy-1,4-phenylene vinylene) (MDDO-PPV)/Au structure has been fabricated and characterized. Red light emission with nonlinear emission intensity-current characteristic has been observed in this device. The observed light emission should originate from the radiative recombination in the porous Si layer.
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