Resist adhesion to the mold is one of the challenges for nanoimprint lithography. The main approach to overcoming it is to apply a self-assembled monolayer of an organosilane release agent to the mold surface, either in the solution phase or vapor phase. We compared the atomic force microscopy, ellipsometry, reflection-absorption infrared spectroscopy, and contact angle results collected from substrates treated by two different application processes and found that the vapor-phase process was superior. The vapor-treated substrates had fewer aggregates of the silane molecules on the surface, because the lower density of the agent in the vapor phase was not conducive to aggregation formation, and received a superior coating of the releasing agent, because the vapor was more effective than the solution in penetrating into the nanoscale gaps of the mold. A pattern transfer of 20 parallel nanowires with a line width of 40 nm at 100 nm pitch-size was performed faithfully with the vapor-treated mold without any resist adhesion.

The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on 〈11̄01〉 planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs.

We demonstrate an effective method for depositing smooth silver (Ag) films on SiO(2)/Si(100) substrates using a thin seed layer of evaporated germanium (Ge). The deposited Ag films exhibit smaller root-mean-square surface roughness, narrower peak-to-valley surface topological height distribution, smaller grain-size distribution, and smaller sheet resistance in comparison to those of Ag films directly deposited on SiO(2)/Si(100) substrates. Optically thin ( approximately 10-20 nm) Ag films deposited with approximately 1-2 nm Ge nucleation layers show more than an order of magnitude improvement in the surface roughness. The presence of the thin layer of Ge changes the growth kinetics (nucleation and evolution) of the electron-beam-evaporated Ag, leading to Ag films with smooth surface morphology and high electrical conductivity. The demonstrated Ag thin films are very promising for large-scale applications as molecular anchors, optical metamaterials, plasmonic devices, and several areas of nanophotonics.