In this paper, the influence of a 600 °C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory.
Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.