The negative bias temperature instability (NBTI) characteristics of p-channel metal oxide semiconductor field effect transistor (pMOSFET) devices with novel Hf x Mo y N z metal gates have been investigated for the first time. The threshold voltage (V th ) shift, subthreshold swing (SS), off-leakage current, and field effect mobility ( FE ) were found to be degraded after NBTI stress. The possibility of nitrogen diffusing to the oxide is increased by employing a higher N 2 ratio during Hf x Mo y N z deposition. The higher nitrogen content in Hf x Mo y N z metal gates shows threshold voltage (V th ) shift, subthreshold swing (SS), off-leakage current, and field effect mobility ( FE ) degradation. The degradation of threshold voltage (V th ), subthreshold swing (SS), off-leakage current, and field effect mobility ( FE ) are believed to be due to the interface states and fixed oxide charges generation from the broken Si-H bonds at the SiO 2 /Si interface. Furthermore, the mechanism of NBTI degradation has been suggested by a physical model and an energy band diagram.
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