Whereas p type semiconducting diamond is well‐developed with boron doping, it is still challenge to directly determine boron content within type IIb diamonds in material science. In this work, we show a systematic study on analysis of electronic Raman effect in boron‐doped diamond (BDD) containing boron ranging from several to ~104 ppm. Beside a sharp peak near 5.2 cm−1, a shoulder associated with the Raman electronic effect near 12.1 cm−1 presents in the BDD samples and the intensity is observed to increase significantly with the increasing boron content. Our results demonstrate that the electronic line can be employed as an effective indication for simple, non‐destructive, accurate and broadly applicable boron calibration in semiconducting BDD samples.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.