ZrO2 sols were obtained by hydrothermal synthesis. With different hydrothermal synthesis time, ZrO2 particle size varied from 5nm to 16nm. And ZrO2 thin films were prepared with spin coating method. ZrO2 thin films were characterized or examined by many kinds of instruments. And 1-on-1 laser-induced damage threshold tests on ZrO2 films were carried out. Refractive index and thickness of the ZrO2-PVP films were measured by means of automatic scanning spectroscopic ellipsometer and the refractive index of ZrO2 -PVP film changed with the addition of PVP content.
In this research, p-type porous silicon was successfully fabricated with a typical electrochemical etching method. The mixed solution of HF and absolute ethyl alcohol with different volume ratio was used as the electrolyte in this experiment. The anodic current density was 20 mA/cm2~60 mA/cm2. The luminous intensity of the PS samples increased with the increasing of the current density, the peaks of PL first red shift (from 692.1nm to 727.9nm) then blue shift (from 727.9nm to719.6nm). With the increasing of the concentration of HF, PS luminous intensity gradually decreases, and the peaks of PL gradually occurs red shift. And possible mechanisms of the growth and the photoluminescence of porous silicon were proposed to explain the experimental result.
ZrO2 –PVP thin films were prepared with sol-gel and spin coating method. The films were characterized or examined by many kinds of instruments. With different heating treatment temperature, the surface toughness Ra of ZrO2-PVP thin films are different from 0.421nm to 0.738. And 1-on-1 laser-induced damage threshold tests on ZrO2 films were carried out with a Q–switched Nd-YAG high power laser at 1064 nm with a pulse width of 1ns. The experimental results showed that ZrO2 thin films could achieve good surface micro morphology and high laser induced damage threshold.
By PECVD deposition technology, we mainly investigated the influence of PRF (radio frequency power) on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300°C. We study the crystallization ratio, grain size of the silicon thin film specially. The results reveal that the crystallization ratio and grain size of the silicon thin film changed along with RF power. The silicon thin film crystallization ratio and grain size changed sharply when PRF =70 W. On this work we think ideal μc-Si:H can be obtained at PRF= 70 W and in the suitable experimental conditions.
The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.
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