Reduced graphene oxide (rGO) sheets are synthesized and tunneling junction devices are fabricated with an aluminum oxide layer inserted in between electrodes and rGO sheets. Differential conductances, revealing density of states (DOS), of rGO sheets are measured in a wide voltage range. A difference in DOS of rGO sheets with different thickness is identified. For the single-layer rGO, the DOS shows a whole band with band edges in line with theoretical predictions, and gating DOS is used to estimate electron's Fermi velocity. Disorder effects on conductance and DOS of rGO sheets are explored and compared with each other. V
We present theoretical and experimental investigations of the magnetism of paramagnetic semiconductor CdSe:Mn nanocrystals and propose an efficient approach to the exposure and analysis of the underlying anti-ferromagnetic interactions between magnetic ions therein. A key advance made here is the build-up of an analysis method with the exploitation of group theory technique that allows us to distinguish the anti-ferromagnetic interactions between aggregative Mn 2+ ions from the overall pronounced paramagnetism of magnetic ion doped semiconductor nanocrystals. By using the method, we clearly reveal and identify the signatures of antiferromagnetism from the measured temperature dependent magnetisms, and furthermore determine the average number of Mn 2+ ions and the fraction of aggregative ones in the measured CdSe:Mn nanocrystals.
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