Graphene's remarkable electrical and optical properties afford great potential for constructing various optoelectronic devices, including modulators, photodetectors and pulse lasers. In particular, graphene-based optical modulators were demonstrated to be featured with a broadband response, small footprint, ultrafast speed and CMOS-compatibility, which may provide an alternative architecture for light-modulation in integrated photonic circuits. While on-chip graphene modulators have been studied in various structures, most of them are based on a capacitance-like configuration subjected to complicated fabrication processes and providing a low yield of working devices. Here, we experimentally demonstrate a new type of graphene modulator by employing graphene's electrical and thermal properties, which can be achieved with a simple fabrication flow. On a graphene-coated microring resonator with a small active area of 10 μm(2), we have obtained an effective optical modulation via thermal energy electrically generated in a graphene layer. The resonant wavelength of the ring resonator shifts by 2.9 nm under an electrical power of 28 mW, which enables a large modulation depth of 7 dB and a broad operating wavelength range of 6.2 nm with 3 dB modulation. Due to the extremely high electrical and thermal conductivity in graphene, the graphene thermo-optical modulator operates at a very fast switching rate compared with the conventional silicon thermo-optic modulator, i.e. 10%-90% rise (90%-10% fall) time of 750 ns (800 ns). The results promise a novel architecture for massive on-chip modulation of optical interconnects compatible with CMOS technology.
Graphical abstract:The thickness-dependent Raman spectra, transport properties and photoresponse (from the visible light up to communication band) of few-layer black phosphorus were studied systematically.a Crystalline thin layer of black phosphorus (BP) has emerged as a new category of two-dimensional (2D) materials very recently, due to its tunable direct bandgap, promising physical properties, and potential applications in optoelectronics. Herein, the Raman scattering properties of the BP few layers including frequency shift and intensity of the Ag 1 , B2g and Ag 2 modes have been studied in details and show obvious dependence on thicknessand light polarization. The optoelectronic performances of few-layer black phosphorus including field-effect properties and photosensitivity to laser lights with different wavelength are also investigated. The optoelectronic parameters including the current modulation, mobility, photoresponsivity and response time vary distinctly with the layer thickness. At room temperature, the obvious bipolar transport properties are obtained (with the hole and electron mobility as high as 240 and 2 cm 2 V -1 s -1 , respectively) in the thicker (15 nm) BP devices, while the thinner (9 nm) BP only shows P-type transportation. The photoresponsivity of BP devices under different laser light illumination reach several tens of mA/W, which demonstrates its excellent photoresponsive property and broadband detection. The thinner (9 nm) BP show a high photoresponsivity of 64.8 mA/W at the communication band of 1550 nm, which is much larger than that of the thicker sample. Our findings reveal that the charge transport and infrared photo-response properties of BP are excellent, diverse and can be intentionally designed through the thickness control. Such results also suggest BP's great potentials in nanoelectronic devices and photodetection from the visible light up to communication band (infrared light). Journal Name ARTICLEThis journal is © The Royal Society of Chemistry 20xx J . Na m e., 2 013, 00, 1 -3 | 7 Please do not adjust margins Please do not adjust margins 45 Perea-Lopez, N.; Elias, A. L.; Berkdemi r, A.; Castro-Beltran, A.; Gutierrez, H. R.; Feng, S. M.; Lv, R. T.; Ha yashi , T.; Lopez-Urias , F.; Ghosh, S.; Muchha rla , B.; Talapatra , S.; Terrones , H.; Terrones , M.
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